Name: Silicon Non-Volatile Memories: Paths of Innovation (en Inglés)
Price: 2824.69 MXN
Availability: InStock
Author: De Salvo, Barbara
ISBN: 9781848211056

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portada Silicon Non-Volatile Memories: Paths of Innovation (en Inglés)

Formato

Libro Físico

Autor

Barbara De Salvo

Editorial

Wiley-Iste

Idioma

Inglés

N° páginas

256

Encuadernación

Tapa Dura

Dimensiones

23.4 x 15.5 x 2.0 cm

Peso

0.52 kg.

ISBN

1848211058

ISBN13

9781848211056

Categorías

Dispositivos y materiales electrónicos

Silicon Non-Volatile Memories: Paths of Innovation (en Inglés)

Barbara De Salvo (Autor) · Wiley-Iste · Tapa Dura

Libro Físico

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Origen: Reino Unido (Costos de importación incluídos en el precio)

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Reseña del libro "Silicon Non-Volatile Memories: Paths of Innovation (en Inglés)"

Semiconductor flash memory is an indispensable component of modern electronic systems which has gained a strategic position in recent decades due to the progressive shift from computing to consumer (and particularly mobile) products as revenue drivers for Integrated Circuits (IC) companies. This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different "evolutionary paths" based on the use of new materials (such as silicon nanocrystals for storage nodes and high-k insulators for active dielectrics) and of new transistor structures (such as multi-gate devices) are investigated in order to extend classical floating gate technology to the 32 nm node. "Disruptive paths" based on new storage mechanisms or new technologies (such as phase-change devices, polymer or molecular cross-bar memories) are also covered in order to address 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developments in this area.